一句话：提出 STRAW，通过按字线感知读干扰并按需回收，以及基于字线有效性调节通过电压，降低读回收开销。
高密度 NAND 闪存的读干扰问题日益严重。现有按块粒度触发读回收（RR）的技术存在两个局限：忽略各字线（WL）可靠性的异质性，造成不必要回收；且只在错误累积后才处理干扰，导致现代 NAND 中大量 RR 拷贝开销。为此，作者提出 STRAW：其一，压力感知的基于 WL 的读回收，监控每个 WL 的累积读干扰，仅回收受干扰严重的 WL；其二，压力降低读，在每次读操作中根据 WL 有效性缩放通过电压，以减轻有效 WL 上的干扰。基于现代 SSD 模拟器的实验表明，与最先进技术相比，STRAW 平均降低 RR 引起的页拷贝开销 88.6%。
While NAND flash memory has continuously increased its storage density over decades, this progress has exacerbated the read-disturbance problem. In this work, we identify two fundamental limitations of existing read-disturbance management techniques that trigger read reclaim (RR) at the block granularity: (i) they overlook the heterogeneous reliability impact of read disturbance across individual wordlines (WLs), leading to unnecessary RR in many cases; and (ii) they address read disturbance only after disturbance-induced errors have already accumulated, which forces substantial RR-induced copy overheads in read-disturbance-prone modern NAND flash memory. To address these limitations, we propose STRAW (STRess-Aware Wordline-based read-disturbance management), a new technique that minimizes RR overheads through two key ideas: (i) stress-aware WL-based read reclaim, which monitors the accumulated read-disturbance effect on each WL and reclaims only heavily disturbed WLs, and (ii) stress-reduced read, which mitigates disturbance on valid WLs during each read operation by scaling pass-through voltages based on WL validity. Our experimental results using a modern SSD emulator show that STRAW reduces RR-induced page-copy overhead by 88.6% on average compared with the state-of-the-art technique.
@inproceedings{ChunLC0K026,
title = {STRAW: Stress-Aware WL-Based Read Disturbance Management for High-Density NAND Flash Memory},
author = {Myoungjun Chun and Jaeyong Lee and Inhyuk Choi and Jisung Park and Myungsuk Kim and Jihong Kim},
booktitle = {ASPLOS},
year = {2026},
doi = {10.1145/3779212.3790228}
}