paperbot · PL 论文追踪

全部论文 待读 收藏

P2 Reducing solid-state drive read latency by optimizing read-retry

通过优化读重试(read-retry)降低固态硬盘读延迟
ASPLOS Proceedings of the 26th ACM International Conference on Architectural Support for Programming Languages and Operating Systems2021匹配度 0/10 · 该论文研究 SSD 中 3D NAND 闪存的读重试延迟优化,属于存储系统/体系结构方向,与用户画像中的 PL 与 AI 交叉、静态分析、浮点程序分析、贝叶斯程序分析等核心方向完全无关。引用 3 inbox
Jisung Park, Myungsuk Kim, Myoungjun Chun, Lois Orosa, Jihong Kim, Onur Mutlu
crossref: 2026-09-12

AI 速览

一句话:利用 CACHE READ 命令流水化重试步骤并自适应缩短芯片级读延迟,显著降低 SSD 的读重试延迟。

采用先进多级单元(MLC)技术的 3D NAND 闪存虽提供高存储密度,但因大量读重试操作而出现明显性能退化。读重试是保证现代 NAND 闪存可靠性的必要机制,却需要以调整后的读参考电压多次重读目标页,从而大幅增加 SSD 读延迟。作者通过细致分析读机制并对 160 颗真实 3D NAND 闪存芯片进行严格刻画,发现两个可利用的机会:一是 CACHE READ 命令可让闪存芯片以流水线方式执行连续读,二是最终重试步骤中存在较大的 ECC 能力余量。基于此提出两种技术:PR²(Pipelined Read-Retry)用 CACHE READ 流水化相邻重试步骤以缩短整体重试延迟;AR²(Adaptive Read-Retry)根据决定 ECC 余量的当前工作条件动态降低芯片级读延迟,从而缩短每一步重试的耗时。在 12 个真实负载上的评估表明,该方案相对当前最优基线最多将 SSD 响应时间改善 31.5%(平均 17%),且只需对 SSD 控制器做少量修改。

问题
现代 3D NAND 闪存为保证可靠性必须执行读重试,但多步重试会显著增加 SSD 的读延迟,成为性能瓶颈。
方法
在分析读机制并刻画 160 颗真实 3D NAND 芯片的基础上,提出 PR² 与 AR²:前者用 CACHE READ 命令流水化连续重试步骤,后者依据当前运行条件动态调整芯片级读延迟以利用 ECC 能力余量。
评估
使用 12 个真实工作负载进行评测,相对最先进基线最多将 SSD 响应时间改善 31.5%(平均 17%),且对 SSD 控制器的改动很小。
原文摘要(Abstract)

3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is essential to ensuring the reliability of modern NAND flash memory, it can significantly in-crease the read latency of an SSD by introducing multiple retry steps that read the target page again with adjusted read-reference voltage values. Through a detailed analysis of the read mechanism and rigorous characterization of 160 real 3D NAND flash memory chips, we find new opportunities to reduce the read-retry latency by exploiting two advanced features widely adopted in modern NAND flash-based SSDs: 1) the CACHE READ command and 2) strong ECC engine. First, we can reduce the read-retry latency using the advanced CACHE READ command that allows a NAND flash chip to perform consecutive reads in a pipelined manner. Second, there exists a large ECC-capability margin in the final retry step that can be used for reducing the chip-level read latency. Based on our new findings, we develop two new techniques that effectively reduce the read-retry latency: 1) Pipelined Read-Retry (PR²) and 2) Adaptive Read-Retry (AR²). PR² reduces the latency of a read-retry operation by pipelining consecutive retry steps using the CACHE READ command. AR² shortens the latency of each retry step by dynamically reducing the chip-level read latency depending on the current operating conditions that determine the ECC-capability margin. Our evaluation using twelve real-world workloads shows that our proposal improves SSD response time by up to 31.5% (17% on average)over a state-of-the-art baseline with only small changes to the SSD controller.

链接与引用

DOI 原文 · PDF(开放获取) ·

BibTeX
@inproceedings{paperbot6127,
  title = {Reducing solid-state drive read latency by optimizing read-retry},
  author = {Jisung Park and Myungsuk Kim and Myoungjun Chun and Lois Orosa and Jihong Kim and Onur Mutlu},
  booktitle = {ASPLOS},
  year = {2021},
  doi = {10.1145/3445814.3446719}
}